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NTE904 Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)
Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12-Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility. The transistors of the NTE904 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits but in addition they provide the advantages of close electrical and thermal matching inherent in integrated circuit construction. Features: D Matched Monolithic General Purpose Transistors D Current Gain Matched to 10% D Base-Emitter Voltage Matched to 2mV D Operation from DC to 120MHz D Wide Operating Current Range D Low Noise Figure Applications: D General use in Signal Processing Systems in DC through VHF Range D Custom Designed Differential Amplifiers D Temperature Compenstaed Amplifiers Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage (Each Transistor), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector-Base Voltage (Each Transistor), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Substrate Voltage (Each Transistor, Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage (Each Transistor), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current (Each Transistor), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Power Dissipation, PD Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Total package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW Derate Above 85C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate (Pin10) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Static Characteristics Collector Cutoff Current Collector Cutoff Current (Darlington Pair) Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Substrate Breakdown Voltage Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio ICBO ICEO ICEOD VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IB = 0 - - - 15 30 5 40 - 50 60 54 0.9 2000 1000 - - - - 1.10 - - - 0.002 - - 24 60 7 60 0.23 100 100 - 0.97 5400 2800 - 0.5 5 - - - - 0.5 - 200 - - - - V V mV mV/C V V mV/C V/C dB nA A A V V V V V Symbol Test Conditions Min Typ Max Unit
V(BR)CEO IC = 1mA, IB = 0 V(BR)CBO IC = 10A, IE = 0 V(BR)EBO IE = 10A, IC = 0 V(BR)CIO VCE(sat) hFE IC = 10A, IC1 = 0 IC = 10mA, IB = 1mA VCE = 3V, IC = 10mA VCE = 3V, IC = 1mA VCE = 3V, IC = 10A
Magnitude of Static-Beta Ratio (Isolated Transistors Q1 and Q2) Static Forward Current Transfer Ratio (Darlington Pair Q3 and Q4) Base-Emitter Voltage Input Offset Voltage Temperature Coefficient of Base-Emitter Voltage (Q1 - Q2) Base (Q3)-Emitter (Q4) Voltage Darlington Pair Temperature Coefficient of Base-Emitter Voltage (Darlington Pair Q3-Q4) Temperature Coefficient of Magnitude of Input Offset Voltage Low Frequency Noise Figure NF VBED hFED VBE
VCE = 3V, IC1 = IC2 = 1mA VCE = 3V, IC = 1mA VCE = 3V, IC = 10A VCE = 3V, IE = 1mA VCE = 3V, IE = 10mA VCE = 3V, IE = 1mA VCE = 3V, IE = 1mA VCE = 3V, IE = 10mA VCE = 3V, IE = 1mA VCE = 3V, IE = 1mA VCC = 6V, VEE = -6V, IC1 = IC2 = 1mA VCE = 3V, IC = 100A, f = 1kHz, RS = 1k VCE = 3V, IC = 1mA, f = 1kHz
0.600 0.715 0.800 0.800 0.900 0.48 1.9 1.46 1.32 4.4 10 3.25 2.0 - 1.60 1.50 - - -
Low Frequency, Small-Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio Short-Circuit Input Impedance Open-Circuit Output Impedance Open-Circuit Reverse Voltage Transfer Ratio Admittance Characteristics Forward Transfer Admittance Input Admittance Output Admittance Gain-Bandwidth Product Emitter-Base Capacitance Collector-Base Capacitance Collector-Substrate Capacitance Yfe Yie Yoe fT CEB CCB CCI VCE = 3V, IC = 3mA VEB = 3V, IE =0 VCB = 3V, IC = 0 VCI = 3V, IC = 0 VCE = 3V, IC = 1mA, f = 1kHz 31-j1.5 (Typ) 0.3+j0.04 (Typ) 0.001+j0.03 (Typ) 300 - - - 500 0.6 0.58 2.8 - - - - mmho mmho mmho MHz pF pF pF hfe hie hoe hre - - - 110 3.5 15.6 - - - k mhos
1.8 x 104 (Typ)
Pin Connection Diagram (Top View)
Collector Q1 8 Base Q3 9 Substrate/Case 10 Collector Q3 11 Collector Q4 12 1
6 Emitter Q1 7 6 Base Q1 5 Collector Q2 4 Emitter Q 2
Emitter Q4
3 Base Q 2 1 2 Emitter Q3/Base Q4
.370 (9.4) Dia Max .335 (8.5) Dia Max
.180 (4.57) Max
.500 (12.7) Min
.018 (0.48) Dia Typ .245 (6.23) Dia 4 3 2 1
5 6 7
12 11 10 9
8

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